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參數(shù)資料
| 型號： | JDV2S09FS |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | UHF BAND, 10.4 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | 1-1L1A, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 120K |
| 代理商： | JDV2S09FS |
JDV2S09FS
2004-02-09
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S09FS
VCO for UHF band
High capacitance ratio: C1V/C4V = 2.1 (typ.)
Low series resistance: rs = 0.33 (typ.)
This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 10 V
3
nA
C1V
VR = 1 V, f = 1 MHz
9.7
Capacitance
C4V
VR = 4 V, f = 1 MHz
4.45
5.45
pF
Capacitance ratio
C1V/C4V
1.8
2.1
Series resistance
rs
VR = 1 V, f = 470 MHz
0.33
0.45
Note: Signal level when capacitance is measured. Vsig = 500 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
B
0.
8±
0
.05
0.2
1.
0
±
0
.05
0.1±0.05
0.6±0.05
0.
1
0.
1
A
0.48+0.02
-0.03
±0.05
A
M
0.07
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