- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄61501 > JDV2S10S UHF BAND, 7.8 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE PDF資料下載
參數(shù)資料
| 型號(hào)： | JDV2S10S |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | UHF BAND, 7.8 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | 1-1K1A, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | JDV2S10S |
JDV2S10S
2007-11-01
1
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S10S
VCO for UHF Band Radio
High Capacitance Ratio: C0.5V/C2.5V = 2.5 (typ.)
Low Series Resistance : rs = 0.35 (typ.)
This device is suitable for use in a small-size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
10
V
Reverse current
IR
VR = 10 V
3
nA
C0.5V
VR = 0.5 V, f = 1 MHz
7.3
8.4
Capacitance
C2.5V
VR = 2.5 V, f = 1 MHz
2.75
3.4
pF
Capacitance ratio
C0.5V/C2.5V
2.4
2.5
Series resistance
rs
VR = 1 V, f = 470 MHz
0.35
0.5
Ω
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JDV2S13S | UHF BAND, 6.2 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| JDV2S14E | 60.5 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| JDV2S16S | UHF BAND, 3.59 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| JDV2S19S | UHF BAND, 3.665 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| JDV2S22FS | UHF BAND, 3.43 pF, SILICON, VARIABLE CAPACITANCE DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JDV2S10T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VCO for UHF Band Radio |
| JDV2S13FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type |
| JDV2S13S | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Diode Silicon Epitaxial Planar Type |
| JDV2S14E | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Diode Silicon Epitaxial Planar Type |
| JDV2S14ETPH3 | 制造商:Toshiba America Electronic Components 功能描述:VAR CAP SGL 10V 44PF 2PIN ESC - Tape and Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。