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參數(shù)資料
| 型號： | JDV2S02E |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | UHF BAND, 2.05 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | 1-1G1A, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 95K |
| 代理商： | JDV2S02E |
JDV2S02E
2002-01-16
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S02E
VCO for UHF band
Small Package
High Capacitance Ratio: C1V/C4V = 2.0 (typ.)
Low Series Resistance: rs = 0.60 (typ.)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 10 V
3
nA
C1V
VR = 1 V, f = 1 MHz
1.8
2.05
2.3
Capacitance
C4V
VR = 4 V, f = 1 MHz
0.83
1.03
1.23
pF
Capacitance ratio
C1V/C4V
1.8
2
Series resistance
rs
VR = 1 V, f = 470 MHz
0.6
0.8
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g
F B
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