參數(shù)資料
型號(hào): JDP2S02ACT
元件分類: PIN二極管
英文描述: SILICON, PIN DIODE
封裝: CST2, 1-1P1A, 2 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 140K
代理商: JDP2S02ACT
JDP2S02ACT
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S02ACT
UHF~VHF Band RF Switch Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: rs = 1.0 Ω (typ.)
Low capacitance: CT = 0.3 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Forward current
IF
50
mA
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
30
V
Reverse current
IR
VR = 30 V
0.1
μA
Forward voltage
VF
IF = 50 mA
0.9
0.94
V
Capacitance(Note2)
CT
VR = 1 V, f = 1 MHz
0.3
0.4
pF
Series resistance
rs
IF = 10 mA, f = 100 MHz
1.0
1.5
Ω
Note1: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
1.0±
0.05
0.6±0.05
0.38
+0.02 -0.03
1
2
1:Cathode
2:Anode
0.05±
0.03
0.05±0.03
0.5±0.03
0.65
0.25±
0.03
0.25±
0.03
JEDEC
JEITA
TOSHIBA
1-1P1A
Weight: 0.00077g (typ.)
Unit:mm
02
Cathode
Part Number
CST2
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