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參數(shù)資料
| 型號： | JDP4L08CTC |
| 元件分類： | PIN二極管 |
| 英文描述： | 30 V, SILICON, PIN DIODE |
| 封裝： | CST4C, 1-1U1A, 4 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 125K |
| 代理商： | JDP4L08CTC |
JDP4L08CTC
2009-10-13
1
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP4L08CTC
UHF~VHF Band RF Switch Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 4-pin small packages.
Low series resistance: rs = 1.0 Ω (typ.)
Low capacitance: CT = 0.21 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Forward current
IF
50
mA
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
30
V
Reverse current
IR
VR = 30 V
0.1
μA
Forward voltage
VF
IF = 50 mA
0.89
0.95
V
Capacitance(Note1)
CT
VR = 1 V, f = 1 MHz
0.21
0.4
pF
Series resistance
rs
IF = 10 mA, f = 100 MHz
1.0
1.5
Ω
Note1: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking(top view), Pin configuration and internal connection(top view)
JEDEC
―
JEITA
―
TOSHIBA
1-1U1A
Weight: 0.84mg(Typ.)
Unit:mm
Part Number
TA
1.CATHODE1
2.ANODE1
3.CATHODE2
4. ANODE2
*Electrodes : on the bottom
0.
8
0±
0.
05
1.20±0.05
0.
2
5±
0.
02
0.35±0.02
0.
3
8
+0
.0
2
-0
.0
3
0.75±0.02
0.
4
5±
0.
02
CST4C
4
1
3
2
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