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參數(shù)資料
| 型號(hào)： | JDH2S03S |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.03 A, 30 V, SILICON, SIGNAL DIODE |
| 封裝： | SESC, 1-1K1A, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 165K |
| 代理商： | JDH2S03S |
JDH2S03S
2009-06-09
1
TOSHIBA DIODE Silicon Epitaxial Schottky Barrier Type
JDH2S03S
UHF Band Mixer
High reverse voltage: VR = 30V
Low fowerd voltage: VF = 0.4V (max)
Absolute Maximum Ratings (Ta = 25°C)
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage
and
the
significant
change
in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor
Reliability
Handbook
(“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 1mA
0.4
V
Reverse current
IR
VR = 30 V
0.5
μA
Capacitance
CT
VR = 1 V,ｆ=1MHz
1.2
pF
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 1.1 mg (typ.)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Forward current
IF
30
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
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