- 您現在的位置：買賣IC網 > PDF目錄353812 > JANTXV2N7373 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-254AA PDF資料下載
參數資料
| 型號： | JANTXV2N7373 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-254AA |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 5A條一（c）|至254AA |
| 文件頁數： | 19/19頁 |
| 文件大小： | 103K |
| 代理商： | JANTXV2N7373 |
MIL-PRF-19500/512E
9
4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see
table IV of
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
(1) 3c
Required (see 4.3.2)
9
hFE2, ICBO2
Not applicable
11
ICBO2; hFE2; ICBO2 = 100 percent of
initial value or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
ICBO2 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
Subgroup 2 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
(1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in
accordance with MIL-PRF-19500, screen 3 prior to this thermal test.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in 4.5 of
MIL-STD-750; VCB = 10-20 V dc; power shall be applied to achieve TJ = 135°C minimum and a minimum power
dissipation = 75 percent of maximum rated PT (see 1.3). NOTE: No heat sink or forced air cooling on the devices
shall be permitted.
相關PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N918 | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| JCLFCMEN-15.000MHZ | Voltage-Controlled Oscillator |
| JCLFCMEN-155.520MHZ | Voltage-Controlled Oscillator |
| JCLFCMEN-170.000MHZ | Voltage-Controlled Oscillator |
| JCLFCMEN-77.760MHZ | Voltage-Controlled Oscillator |
相關代理商/技術參數 |
參數描述 |
|---|---|
| JANTXV2N918 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk |
| JANTXV2N918UB | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 15V 0.05A 3-Pin UB 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Waffle Pack |
| JANTXV2N930 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk 制造商:Microsemi Corporation 功能描述:NPN LOW POWER SILICON TRANSISTOR |
| JANTXV2N930UB | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Waffle Pack |
| JANTXV4N22 | 功能描述:Optoisolator Transistor with Base Output 1000VDC 1 Channel TO-78-6 制造商:tt electronics/optek technology 系列:- 包裝:散裝 零件狀態(tài):有效 通道數:1 電壓 - 隔離:1000VDC 電流傳輸比（最小值）:25% @ 10mA 電流傳輸比（最大值）:- 打開 / 關閉時間（典型值）:- 上升/下降時間（典型值）:20μs，20μs（最大） 輸入類型:DC 輸出類型:有基極的晶體管 電壓 - 輸出（最大值）:40V 電流 - 輸出/通道:50mA 電壓 - 正向（Vf）（典型值）:1.5V（最大） 電流 - DC 正向（If）:40mA Vce 飽和值（最大值）:300mV 工作溫度:-55°C ~ 125°C 安裝類型:通孔 封裝/外殼:TO-78-6 金屬罐 供應商器件封裝:TO-78-6 標準包裝:1 |
發(fā)布緊急采購，3分鐘左右您將得到回復。