參數(shù)資料
型號(hào)： JANS1N5618US
廠商： MICROSEMI CORP
元件分類： 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述： 1 A, SILICON, SIGNAL DIODE
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 384K
代理商： JANS1N5618US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT STANDARD
RECOVERY GLASS RECTIFIERS
SCOTTSD A L E DIVISION
1N5614US thru 1N5622US
W
.Mi
cr
os
em
i
.C
O
M
1N
56
14
U
S
–
1N
56
22
U
S
DESCRIPTION
APPEARANCE
This “standard recovery” surface mount rectifier diode series is military qualified to
MIL-PRF-19500/427 and is ideal for high-reliability applications where a failure
cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in axial-leaded thru-hole package configurations (see separate
data sheet for 1N5614 thru 1N5622). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including fast and ultrafast device types in both through-hole and
surface mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Surface mount package series equivalent to the
JEDEC registered 1N5614 to 1N5622 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/427
Axial-leaded equivalents also available (see separate
data sheet for 1N5614 thru 1N5622)
Standard recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction & Storage Temperature: -65
oC to +200oC
Thermal Resistance: 7
oC/W junction to end cap
Thermal Impedance: 4.5
oC/W @ 10 ms heating time
Average Rectified Forward Current (IO): 1.0 Amps @
TA = 55C and 0.75 Amps @ TA = 100C
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260C for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINALS: End caps are solid Silver with
Tin/Lead (Sn/Pb) finish
MARKING & POLARITY: Cathode band only
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 193 mg
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50A
AVERAGE
RECTIFIED
CURRENT
IO @ TA
(NOTE 1)
FORWARD
VOLTAGE
(MAX.)
VF @ 3A
REVERSE
CURRENT
(MAX.)
IR @ VRWM
MAXIMUM
SURGE
CURRENT
IFSM
(NOTE 2)
REVERSE
RECOVERY
(NOTE 3)
trr
VOLTS
AMPS
VOLTS
A
AMPS
s
55
oC
100
oC
25
oC
100
oC
1N5614US
1N5616US
1N5618US
1N5620US
1N5622US
200
400
600
800
1000
220
440
660
880
1100
1.00
.750
0.8 MIN.
1.3 MAX.
0.5
25
30
2.0
NOTE 1: From 1 Amp at TA = 55
oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,
derate linearly at 7.5 mA/
oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175
oC.
NOTE 2: TA = 100
oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2004
9-14-2004 REV A
相關(guān)PDF資料
PDF描述
JANS1N5614US 1 A, SILICON, SIGNAL DIODE
JANS1N5616US 1 A, SILICON, SIGNAL DIODE
JANS1N5809 1.7 A, 100 V, SILICON, RECTIFIER DIODE
JANTXV1N5809 1.7 A, 100 V, SILICON, RECTIFIER DIODE
JANTX1N5811 1.7 A, 150 V, SILICON, RECTIFIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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JANS1N5620 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) - Waffle Pack
JANS1N5620US 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) - Waffle Pack
JANS1N5621 制造商:Microsemi Corporation 功能描述:Diode Switching 800V 1A 2-Pin Case A 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) - Waffle Pack
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