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參數(shù)資料
| 型號(hào)： | JANHCE1N5809 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
| 中文描述： | 6 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-1 |
| 文件頁(yè)數(shù)： | 20/28頁(yè) |
| 文件大?。?/td> | 202K |
| 代理商： | JANHCE1N5809 |
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MIL-PRF-19500/420H
20
* TABLE II. Group E inspection (all quality levels) for qualification and requalification only - Continued.
Inspection
MIL-STD-750
Sampling
plan
Method
Conditions
* Subgroup 8
Peak reverse power
See 4.5.5 herein. Peak reverse power (P
RM
)= shall be
characterized by the supplier and this data shall be available
to the Government. Test shall be performed on each sublot.
During the P
RM
test, the voltage (V
BR
) shall be monitored to
verify it has not collapsed. Any collapse in V
BR
during or
after the P
RM
test or rise in leakage current (I
R
) after the test
that exceeds I
R1
in table I shall be considered a failure to that
level of applied P
RM
. Progressively higher levels of P
RM
shall
be applied until failure occurs on all devices within the
chosen sample size to characterize each sublot.
Electrical measurement
Subgroup 9 1/
Resistance to glass
cracking
* Subgroup 10
Forward surge
n = 45
1057
Step stress to destruction by increasing cycles or up to a
maximum of 25 cycles.
22 devices
c = 0
4066
I
= 80 A(pk); 10 surges of 8.3 ms each at 1 minute
intervals, superimposed on I
O
= 2 A dc; V
RWM
= rated V
RWM
(see col. 3 of 1.3). T
A
= +100
°
C.
See table I, subgroup 2 and table III herein.
Electrical measurement
1/ The sample size for this step stress requirement shall be determined by the supplier. A statistically significant
sample size is required.
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| JANHCE1N6391 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER, DIE, CO - Bulk |
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| JANHCF1N58011 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
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