- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379247 > JANHCE1N5809 (MICROSEMI CORP-LAWRENCE) 6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS PDF資料下載
參數(shù)資料
| 型號(hào)： | JANHCE1N5809 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
| 中文描述： | 6 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-1 |
| 文件頁(yè)數(shù)： | 17/28頁(yè) |
| 文件大?。?/td> | 202K |
| 代理商： | JANHCE1N5809 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)當(dāng)前第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)
MIL-PRF-19500/420H
TABLE I. Group A inspection - Continued.
17
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 3
High temperature
operation:
Reverse current
leakage
Reverse current
leakage
1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US
Forward voltage
1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US
Low temperature
operation:
Forward voltage
T
A
= +100
°
C
DC method
I
R2
4016
DC method
V
R
= 200 V dc
V
R
= 400 V dc
V
R
= 600 V dc
V
R
= 800 V dc
V
R
= 1,000 V dc
I
F
= 9.0 A(pk); duty cycle
≤
2
percent (pulsed see 4.5.1); t
p
≤
8.3 ms
75
75
75
75
75
1.2
1.2
1.2
1.3
1.3
μ
A dc
μ
A dc
μ
A dc
μ
A dc
μ
A dc
V(pk)
V(pk)
V(pk)
V(pk)
V(pk)
4011
V
F2
T
A
= -55
°
C
4011
I
F
= 9.0 A(pk); duty cycle
≤
2
percent (pulsed); t
p
≤
8.3 ms
I
F
= 1.5 A dc
I
R
= 50
μ
A dc
I
R
= 50
μ
A dc
I
R
= 50
μ
A dc
I
R
= 50
μ
A dc
I
R
= 50
μ
A dc
V
F3
1.5
V(pk)
Forward voltage
Breakdown voltage
(diodes)
1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US
4011
4021
V
F4
V
BR2
0.5
200
400
600
800
1,000
1.2
V dc
V dc
V dc
V dc
V dc
V dc
Subgroup 4
Reverse recovery time
Scope display evaluation
4031
4023
Condition B1
See 4.5.3, n = 116, c = 0
t
rr
2.0
μ
s
See footnote at end of table.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JC100B | JC050B |
| JC100B1 | JC050B |
| JC107 | npn sisicon transistor |
| JE0402ML180A | Multilayer Ceramic Transient Voltage Suppressor for ESD Protection |
| JE0402ML180L | Multilayer Ceramic Transient Voltage Suppressor for ESD Protection |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANHCE1N6391 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER, DIE, CO - Bulk |
| JANHCE1N6392 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER, DIE, CO - Bulk |
| JANHCF1N58011 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
| JANHCF1N5802 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
| JANHCF1N5804 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。