- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353809 > JAN2N3250A TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 PDF資料下載
參數(shù)資料
| 型號： | JAN2N3250A |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| 中文描述： | 晶體管|晶體管|進步黨| 60V的五（巴西）總裁| 200mA的一（c）|到18 |
| 文件頁數(shù)： | 14/21頁 |
| 文件大小： | 137K |
| 代理商： | JAN2N3250A |
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/368F
2. DOCUMENT DATE
8 July 2002
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES: 2N3439, 2N3439L,
2N3439UA, 2N3440, 2N3440L, AND 2N3440UA, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
COMMERCIAL
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
b. TELEPHONE
Commercial
DSN
FAX
EMAIL
614-692-0510
850-0510
614-692-6939
alan.barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center Columbus,
ATTN: DSCC-VAC
P.O. Box 3990
Columbus, OH 43216-5000
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888
DSN 427-6888
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
相關PDF資料 |
PDF描述 |
|---|---|
| JAN2N3251A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| JAN2N326 | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 2A I(C) | TO-3VAR |
| JAN2N333 | TRANSISTOR | BJT | NPN | 25MA I(C) | TO-5 |
| JAN2N333A | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 25MA I(C) | TO-5 |
| JAN2N333ALT2 | BJT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JAN2N3251A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.2A 3PIN TO-39 - Bulk |
| JAN2N3251AUB | 功能描述:TRANS PNP 60V 0.2A TO-39 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/323 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:200mA 電壓 - 集射極擊穿（最大值）:60V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:500mV @ 5mA，50mA 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:100 @ 10mA，1V 功率 - 最大值:360mW 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應商器件封裝:UB 標準包裝:1 |
| JAN2N326 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 2A I(C) | TO-3VAR |
| JAN2N328A | 制造商: 功能描述: |
| JAN2N329A | 制造商:n/a 功能描述:2N329 SEE NOTES |
發(fā)布緊急采購，3分鐘左右您將得到回復。