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參數(shù)資料
| 型號： | JAN2N3250A |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| 中文描述： | 晶體管|晶體管|進步黨| 60V的五（巴西）總裁| 200mA的一（c）|到18 |
| 文件頁數(shù)： | 11/21頁 |
| 文件大?。?/td> | 137K |
| 代理商： | JAN2N3250A |
MIL-PRF-19500/368F
19
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,
or within the Military Department's System Command. Packaging data retrieval is available from the managing
Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a.
Title, number, and date of this specification.
b.
Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents
referenced (see 2.2.1).
c.
Packaging requirements (see 5.1).
d.
Lead finish (see 3.4.1).
e.
Type designation and quality assurance level.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center Columbus, ATTN: DSCC/VQE, P. O. Box 3990, Columbus, OH 43216-5000.
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| JAN2N3251A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| JAN2N326 | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 2A I(C) | TO-3VAR |
| JAN2N333 | TRANSISTOR | BJT | NPN | 25MA I(C) | TO-5 |
| JAN2N333A | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 25MA I(C) | TO-5 |
| JAN2N333ALT2 | BJT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN2N3251A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.2A 3PIN TO-39 - Bulk |
| JAN2N3251AUB | 功能描述:TRANS PNP 60V 0.2A TO-39 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/323 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:200mA 電壓 - 集射極擊穿（最大值）:60V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:500mV @ 5mA，50mA 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:100 @ 10mA，1V 功率 - 最大值:360mW 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應(yīng)商器件封裝:UB 標準包裝:1 |
| JAN2N326 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 2A I(C) | TO-3VAR |
| JAN2N328A | 制造商: 功能描述: |
| JAN2N329A | 制造商:n/a 功能描述:2N329 SEE NOTES |
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