參數(shù)資料
型號(hào): JAN2N297A
英文描述: TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-3
中文描述: 晶體管|晶體管|進(jìn)步黨| 50V五(巴西)總裁| 5A條一(c)|至3
文件頁(yè)數(shù): 15/19頁(yè)
文件大?。?/td> 103K
代理商: JAN2N297A
MIL-PRF-19500/512E
5
Dimensions
Ltr
Inches
Millimeters
Notes
Ltr
Inches
Millimeter
Notes
Min
Max
Min
Max
Min
Max
Min
Max
A
.061
.075
1.55
1.90
3
D2
.0375 BSC
0.952 BSC
A1
.029
.041
0.74
1.04
D3
.155
3.93
B1
.022
.028
0.56
0.71
E
.215
.225
5.46
5.71
B2
.075 REF
1.91 REF
E3
.225
5.71
B3
.006
.022
0.15
0.56
5
L1
.032
.048
0.81
1.22
D
.145
.155
3.68
3.93
L2
.072
.088
1.83
2.23
D1
.045
.055
1.14
1.39
L3
.003
.007
0.08
0.18
5
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimension "A" controls the overall package thickness. When a window lid is used, dimension "A" must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on
the drawing.
5. Dimensions "B3" minimum and "L3" minimum and the appropriately castellation length define an
unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was
designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension
"B3" maximum and "L3" maximum define the maximum width and depth of the castellation at any point on
its surface. Measurement of these dimensions may be made prior to solder dipping.
FIGURE 3. Physical dimensions, surface mount (UA version).
相關(guān)PDF資料
PDF描述
JAN2N3227 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-18
JAN2N3227UB BJT
JAN2N3250A TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18
JAN2N3251A TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18
JAN2N326 TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 2A I(C) | TO-3VAR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JAN2N3000RB 制造商:n/a 功能描述:2N3000
JAN2N3013 制造商: 功能描述: 制造商:undefined 功能描述:
JAN2N3019 功能描述:兩極晶體管 - BJT JAN2N3019 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
JAN2N3019S 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-39 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-39 Bulk 制造商:Aeroflex / Metelics 功能描述:SMALL SIGNAL TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk 制造商:ON Semiconductor 功能描述:MILITARY TRANSISTOR - Bulk 制造商:ON Semiconductor 功能描述:JAN2N3019S
JAN2N3027 制造商:Microsemi Corporation 功能描述:Thyristor SCR 30V 8A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:THYRISTOR SCR 30V 8A 3PIN TO-18 - Bulk