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參數(shù)資料
| 型號： | J270 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel JFET(最小柵源擊穿電壓30V，最小飽和漏極電流-2mA的P溝道結型場效應管) |
| 中文描述： | P溝道場效應（最小柵源擊穿電壓30V的，最小飽和漏極電流，二毫安的P溝道結型場效應管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 53K |
| 代理商： | J270 |
J/SST270 Series
Siliconix
P-37405—Rev. B, 04-Jul-94
1
P-Channel JFETs
J270
J271
SST270
SST271
Product Summary
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
DSS
Min (mA)
J/SST270
0.5 to 2.0
30
6
–2
J/SST271
1.5 to 4.5
30
8
–6
Features
Low Cutoff Voltage: J270 <2 V
High Input Impedance
Very Low Noise
High Gain
Benefits
Full Performance from Low-Voltage
Power Supply: Down to 2 V
Low Signal Loss/System Error
High System Sensitivity
High-Quality, Low-Level Signal
Amplification
Applications
High-Gain, Low-Noise Amplifiers
Low-Current, Low-Voltage Battery
Amplifiers
Ultrahigh Input Impedance
Pre-Amplifiers
High-Side Switching
Description
The J/SST270 series consists of all-purpose amplifiers for
designs requiring p-channel operation.
The TO-226AA (TO-92) plastic package provides a low-cost
option, while the TO-236 (SOT-23) package
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
D
S
G
TO-236
(SOT-23)
Top View
2
3
1
TO-226AA
(TO-92)
Top View
D
S
G
1
2
3
*Marking Code for TO-236
SST270 (S0)*
SST271 (S1)*
J270
J271
Absolute Maximum Ratings
Gate-Drain Voltage
Gate-Source Voltage
Gate Current
Storage Temperature
Operating Junction Temperature
30 V
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
–50 mA
–55 to 150 C
–55 to 150 C
Lead Temperature (
1
/
16
” from case for 10 sec.)
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 C
. . . . . . . . . . . . . . .
350 mW
Notes
a.
Derate 2.8 mW/ C above 25 C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70258.
相關PDF資料 |
PDF描述 |
|---|---|
| J271 | P-Channel JFET(最小柵源擊穿電壓30V，最小飽和漏極電流-6mA的P溝道結型場效應管) |
| J304 | N-Channel JFET(最小柵源擊穿電壓-30V，最小飽和漏極電流5mA的N溝道結型場效應管) |
| J305 | N-Channel JFET(最小柵源擊穿電壓-30V，最小飽和漏極電流1mA的N溝道結型場效應管) |
| J308 | N-Channel JFET(最小柵源擊穿電壓-25V，最小飽和漏極電流12mA的N溝道結型場效應管) |
| J310 | N-Channel JFET(最小柵源擊穿電壓-25V，最小飽和漏極電流24mA的N溝道結型場效應管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| J270 | 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL JFET 30V TO-92 |
| J270_D26Z | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| J270_D27Z | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| J270_Q | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| J270-18 | 制造商:Vishay Siliconix 功能描述:JFET Transistor, P-Channel, TO-92 |
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