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參數(shù)資料
| 型號(hào)： | J305 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-30V，最小飽和漏極電流1mA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓- 30V的，最小飽和漏極電流1mA的的N溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | J305 |
J304/305
Siliconix
P-37404—Rev. C, 04-Jul-94
1
N-Channel JFETs
Product Summary
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
DSS
Min (mA)
J304
–2 to –6
–30
4.5
5
J305
–0.5 to –3
–30
3
1
Features
Excellent High Frequency Gain: J304,
Gps 11 dB (typ) @ 400 MHz
Very Low Noise: 3.8 dB (typ) @ 400 MHz
Very Low Distortion
High ac/dc Switch Off-Isolation
High Gain: A
V
= 60 @ 100 A
Benefits
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
Applications
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
Description
The J304/305 n-channel JFETs provide high-performance
amplification, especially at high-frequency. These products
are available in tape and reel for automated assembly (see
Package Information).
For similar products in TO-236 (SOT-23) packages, see the
2N/SST5484 series data sheet, or in TO-206AF (TO-72)
packages, see the 2N/SST4416 series data sheet.
S
D
G
TO-226AA
(TO-92)
Top View
1
2
3
Absolute Maximum Ratings
Gate-Source/Gate-Drain Voltage
–30 V
. . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current
10 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
–55 to 150 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–55 to 150 C
. . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 C
350 mW
. . . . . . . . . . . . . . .
Notes
a.
Derate 2.8 mW/ C above 25 C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70236.
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| J309 | N-Channel JFET(最小柵源擊穿電壓-25V，最小飽和漏極電流12mA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| J-305 | 制造商:NTE Electronics 功能描述:Handy Torch - Windproof 制造商:NTE Electronics 功能描述:HANDY TORCH WINDPROOF 制造商:NTE Electronics 功能描述:Handy Torch, Personal Compact Torch With Piezo Electronic Ignition System |
| J305_Q | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| J3055 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Mini size of Discrete semiconductor elements |
| J305-E3 | 功能描述:JFET 30V 1mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| J305-E3 | 制造商:Vishay Siliconix 功能描述:JFET |
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