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參數(shù)資料
| 型號： | IXUC100N055 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | Trench Power MOSFET(最大漏源擊穿電壓55V,導(dǎo)通電阻7.7mΩ的N溝道增強(qiáng)型功率MOSFET) |
| 中文描述： | 100 A, 55 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-273AA |
| 封裝： | ISOPLUS 220, TO-273, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 406K |
| 代理商： | IXUC100N055 |
2000 IXYS All rights reserved
Symbol
Test Conditions Maximum Ratings
V
DSS
V
GS
I
D25
I
D90
I
S25
I
S90
I
D(RMS)
E
AS
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight
T
J
Continuous
= 25 C to 150 C
55
V
20
V
T
C
T
C
T
C
T
C
Package lead current limit
= 25 C; Note 1
= 90 C, Note 1
100
80
A
A
= 25 C; Note 1, 2
= 90 C, Note 1, 2
100
70
A
A
45
A
T
C
T
C
= 25 C
500
mJ
= 25 C
150
W
-55 ... +175
175
-55 ... +150
C
C
C
1.6 mm (0.062 in.) from case for 10 s
300
C
RMS leads-to-tab, 50/60 Hz, t = 1 minute
2500
V~
Mounting force with clips
11 ... 65 / 2.4 ...15
N/lb
3
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
R
DS(on)
V
GS
= 10 V, I
D
= I
D90
, Note 3
6.1
7.7
m
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
2
4
V
I
DSS
V
DS
= V
V
GS
= 0 V
10
A
T
J
= 125 C
0.1
mA
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
200
nA
G = Gate,
S = Source
D = Drain,
* Patent pending
Features
Trench Power MOSFET
ISOPLUS220
TM
Electrically Isolated Back Surface
IXUC100N055
V
DSS
= 55 V
I
D25
= 100 A
R
DS(on)
= 7.7 m
98760 (11/00)
G
D
S
ADVANCED TECHNICAL INFORMATION
TM
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Trench MOSFET
- very low R
- fast switching
- usable intrinsic reverse diode
Low drain to tab capacitance(<30pF)
Unclamped Inductive Switching (UIS)
rated
Applications
Automotive 42V and 12V systems
- electronic switches to replace relays & fuses
- choppers to replace series dropping resistors
used for motors, heaters, etc.
- inverters for AC drives, e.g. starter generator
- DC-DC converters, e.g. 12V to 42V, etc.
Power supplies
- DC - DC converters
- Solar inverters
Battery powered systems
- choppers or inverters for motor control in
hand tools
- battery chargers
Advantages
Easy assembly: no screws or isolation
foils required
Space savings
High power density
Isolated back surface*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXUC120N10 | Trench Power MOSFET ISOPLUS220 |
| IXUC160N075 | Trench Power MOSFET |
| IXUC200N055 | Trench Power MOSFET ISOPLUS220 |
| IXUC60N10 | Trench Power MOSFET ISOPLUS220-TM |
| IXZ308N120 | Z-MOS RF Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXUC120N10 | 制造商:IXYS Corporation 功能描述:MOSFET N ISOPLUS220 |
| IXUC160N075 | 功能描述:MOSFET 160 Amps 75V 5.1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXUC200N055 | 功能描述:MOSFET 200 Amps 55V 4 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXUC60N10 | 制造商:IXYS Corporation 功能描述:MOSFET N ISOPLUS220 |
| IXUN280N10 | 功能描述:MOSFET N-CH 100V 280A SOT-227B RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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