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參數(shù)資料
| 型號： | IXZ308N120 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Z-MOS RF Power MOSFET |
| 中文描述： | Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 151K |
| 代理商： | IXZ308N120 |
IXZ308N120
Z-MOS RF Power MOSFET
V
DSS
I
D25
R
DS(on)
P
DC
= 1200 V
=
8.0 A
=
2.1
=
880 W
Symbol
Test Conditions
Maximum Rat-
ings
V
DSS
T
J
= 25°C to 150°C
1200
V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 M
1200
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
c
= 25°C
8
A
I
DM
T
c
= 25°C, pulse width limited by T
JM
40
A
I
AR
T
c
= 25°C
8
A
E
AR
T
c
= 25°C
TBD
mJ
dv/dt
I
S
≤
I
DM
, di/dt
≤
100A/
μ
s, V
DD
≤
V
DSS
,
T
j
≤
150°C, R
G
= 0.2
5 V/ns
I
S
= 0
>200 V/ns
P
DC
880
W
P
DHS
T
c
= 25°C, Derate 4.4W/°C above 25°C
440
W
P
DAMB
T
c
= 25°C
3.0
W
R
thJC
0.17 C/W
R
thJHS
0.34 C/W
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 4 ma
1200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μΑ
3.5
6.5
V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0
±100
nA
R
DS(on)
V
GS
= 20 V, I
D
= 0.5I
D25
Pulse test, t
≤
300
μ
S, duty cycle d
≤
2%
2.1
g
fs
V
DS
= 50 V, I
D
= 0.5I
D25
, pulse test
10.1
S
T
J
-55
+175
°C
T
JM
175
°C
T
stg
-55
+ 175
°C
T
L
1.6mm(0.063 in) from case for 10 s
300
°C
Weight
3.5
g
I
DSS
V
DS
= 0.8V
T
J
= 25C
V
GS
=0 T
J
=125C
50
1
μ
A
mA
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced Z-MOS process
Low gate charge and capacitances
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
Easy to mount—no insulators needed
High power density
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Lo Capacitance Z-MOS
Optimized for Linear Operation
Ideal for Class AB & C, Broadcast & Communications Applications
Ideal for Class C, D, & E Applications
DRAIN
SG1
SG2
GATE
SD1
SD2
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low Capacitance Z-MOS
TM
MOSFET Process
Optimized for RF Operation
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