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參數(shù)資料
| 型號： | IXTY5N50P |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | PolarHV Power MOSFET - N-Channel Enhancement Mode |
| 中文描述： | 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 102K |
| 代理商： | IXTY5N50P |
2005 IXYS All rights reserved
G = Gate
S = Source
D = Drain
TAB = Drain
DS99446(08/05)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
μ
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 50
μ
A
3.0
5.0
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
5
μ
A
μ
A
T
J
= 125
°
C
50
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.4
Ω
PolarHV
TM
Power MOSFET
Advance Technical Information
N-Channel Enhancement Mode
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
IXTA 5N50P
IXTP 5N50P
IXTY 5N50P
V
DSS
I
D25
R
DS(on)
≤
= 500 V
=
4.8 A
1.4
Ω
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Ω
500
500
V
V
V
GSS
Continuous
V
GSM
±
30
±
40
V
V
Transient
I
D25
I
DM
I
AR
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
4.8
10
A
A
5
A
20
mJ
mJ
250
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 20
Ω
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
T
J
T
JM
T
stg
89
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
300
260
°
C
°
C
M
d
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
TO-263
TO-252
4
3
g
g
g
0.8
TO-263 (IXTA)
G
S
(TAB)
TO-220 (IXTP)
D
(TAB)
G
S
TO-252 (IXTY)
G
S
(TAB)
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