參數(shù)資料
型號(hào)： IXTP2N100
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2A I(D) | TO-220AB
中文描述： 晶體管| MOSFET的| N溝道| 1KV交五（巴西）直|甲（丁）| TO - 220AB現(xiàn)有
文件頁數(shù)： 1/4頁
文件大?。?/td> 76K
代理商： IXTP2N100
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
1000
1000
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
2
8
A
A
100
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
4
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
High Voltage
MOSFET
N-Channel Enhancement Mode
IXTA 2N100
IXTP 2N100
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
1000
V
V
2
4.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
7.0
97540A(5/98)
GDS
TO-220AB (IXTP)
V
DSS
I
D25
R
DS(on)
= 7
= 1000 V
= 2 A
TO-263 AA (IXTA)
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
Advantages
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
G
S
D (TAB)
相關(guān)PDF資料
PDF描述
IXTA2N100 N-Channel Enhancement Mode High Voltage MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻7Ω的N溝道增強(qiáng)型高電壓MOSFET)
IXTP2N80 High Voltage MOSFET
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M-FIAM5H22 Military 28Vin Filter Input Attenuator Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTP2N100A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2A I(D) | TO-220AB
IXTP2N100P 功能描述:MOSFET 2 Amps 1000V 7.5 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTP2N60P 功能描述:MOSFET 2.0 Amps 600 V 4.7 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTP2N80 功能描述:MOSFET 2 Amps 800V 6.2 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTP2N80P 功能描述:MOSFET 2 Amps 800V 6 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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