參數(shù)資料
型號: IXTP2N80
廠商: IXYS CORP
元件分類: JFETs
英文描述: High Voltage MOSFET
中文描述: 2 A, 800 V, 6.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 76K
代理商: IXTP2N80
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
1000
1000
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
2
8
A
A
100
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
4
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
High Voltage
MOSFET
N-Channel Enhancement Mode
IXTA 2N100
IXTP 2N100
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
1000
V
V
2
4.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
300
μ
s, duty cycle d
2 %
7.0
97540A(5/98)
GDS
TO-220AB (IXTP)
V
DSS
I
D25
R
DS(on)
= 7
= 1000 V
= 2 A
TO-263 AA (IXTA)
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
Advantages
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
G
S
D (TAB)
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