參數(shù)資料
型號： IXTM50N20
廠商： IXYS CORP
元件分類： JFETs
英文描述： RES D, 0805, 113000.000 OHM, 1.00%, 1/10W
中文描述： 50 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
封裝： TO-204AE, 2 PIN
文件頁數(shù)： 4/4頁
文件大小： 111K
代理商： IXTM50N20
4 - 4
2000 IXYS All rights reserved
IXTH 50N20
IXTM 50N20
Fig.7
Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
50
T
J
= 25
°
C
Gate Charge - nCoulombs
0
25
50
75
100 125 150 175 200
V
G
0
2
4
6
8
10
12
14
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
T
0.001
0.01
0.1
V
DS
- Volts
0
5
10
15
20
25
C
0
500
1000
1500
2000
2500
3000
3500
4000
4500
C
iss
C
oss
C
rss
10ms
100ms
V
DS
- Volts
1
10
100
I
D
1
10
100
V
SD
- Volts
0.2
0.4
0.6
0.8
1.0
I
D
0
10
20
30
40
V
DS
= 100V
I
D
= 50A
I
G
= 10mA
Limited by R
DS(on)
10μs
100μs
1ms
f = 1 MHz
V
DS
= 25V
T
J
= 125
°
C
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
Single pulse
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