參數(shù)資料
型號(hào)： IXTM50N20
廠商： IXYS CORP
元件分類(lèi)： JFETs
英文描述： RES D, 0805, 113000.000 OHM, 1.00%, 1/10W
中文描述： 50 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
封裝： TO-204AE, 2 PIN
文件頁(yè)數(shù)： 3/4頁(yè)
文件大?。?/td> 111K
代理商： IXTM50N20
3 - 4
2000 IXYS All rights reserved
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
B
G
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS(th)
BV
CES
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
0
10
20
30
40
50
60
70
80
42N20
50N20
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
R
D
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
25
50
75
100 125 150 175 200
R
D
25
50
75
100
125
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
0
10
20
30
40
50
60
70
80
90
100
V
DS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
0
10
20
30
40
50
60
70
80
90
100
6V
5V
T
J
= 25
°
C
V
GS
= 10V
9V
8V
7V
T
J
= 25
°
C
T
J
= 25
°
C
V
GS
= 15V
V
GS
= 10V
I
D
= 40A
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs.
Case Temperature
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
IXTH 50N20
IXTM 50N20
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