參數(shù)資料
型號(hào)： IXTK250N10
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Current MegaMOSFET
中文描述： 250 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： TO-264AA, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 69K
代理商： IXTK250N10
2003 IXYS All rights reserved
Advance Technical Information
Symbol
(T
J
= 25°C unless otherwise specified)
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
100
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
4.0
V
I
GSS
V
GS
= ±20 V DC, V
DS
= 0
±200
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
50
μ
A
mA
1
R
DS(on)
V
= 10 V, I
D
= 90 A
Pulse test, t
≤
300 ms, duty cycle d
≤
2%
5 m
Features
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
International standard package
Fast switching times
Applications
Motor controls
DC choppers
Switched-mode power supplies
DC-DC Converters
Linear Regulators
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
DS99022(03/03)
High Current
MegaMOS
TM
FET
N-Channel Enhancement Mode
Symbol
Test conditions
Maximum ratings
V
DSS
V
DGR
T
J
T
J
= 25°C to 150°C
= 25°C to 150°C; R
GS
= 1.0 M
100
100
V
V
V
GS
V
GSM
Continuous
Transient
±20
±30
V
V
I
D25
I
D(RMS)
I
DM
I
AR
T
External lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
= 25
°
C MOSFET chip capability
250
75
1000
90
A
A
A
A
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
80
4.0
mJ
J
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
730
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Mounting torque
0.7/6
Nm/lb.in.
TO-264
10
g
TO-264 AA (IXTK)
S
G
D
D (TAB)
G = Gate
S = Source
D
Tab = Drain
= Drain
IXTK 250N10
V
DSS
I
D25
R
DS(on)
=
=
=
100 V
250 A
5 m
相關(guān)PDF資料
PDF描述
IXTK33N50 High Current MegaMOSFET
IXTK62N25 High Current MegaMOSFET
IXTM12N45 12 AMPS, 450-500V, 0.4OM/0.5OM
IXTM12N50 IC, I2S-SPDIF CONVERTER
IXTH12N45 12 AMPS, 450-500V, 0.4OM/0.5OM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTK32P60P 功能描述:MOSFET -32 Amps -600V 0.350 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK33N45 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 33A I(D) | TO-264AA
IXTK33N50 功能描述:MOSFET 33 Amps 500V 0.17 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK40P50P 功能描述:MOSFET -40.0 Amps -500V 0.230 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK46N50L 功能描述:MOSFET 44 Amps 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*