參數(shù)資料
型號： IXTK33N50
廠商： IXYS CORP
元件分類： JFETs
英文描述： High Current MegaMOSFET
中文描述： 33 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： TO-264AA, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 85K
代理商： IXTK33N50
1 - 4
2000 IXYS All rights reserved
Symbol
(T
J
= 25°C unless otherwise specified)
Test Conditions
Characteristic Values
Min.
Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 5 mA
BV
DSS
temperature coefficient
500
V
0.087
%/K
V
GS(th)
V
DS
= V
GS
,
I
D
= 250
μ
A
V
GS(th)
temperature coefficient
2.0
4.0
V
-0.25
%/K
I
GSS
V
GS
=
±
20 V DC, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
200
μ
A
mA
3
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.17
Symbol
Test conditions
Maximum ratings
V
DSS
V
DGR
T
J
T
J
= 25°C to 150°C
= 25°C to 150°C; R
GS
= 1.0 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
±20
±30
V
V
I
D25
I
DM
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
33
A
A
132
P
D
T
C
= 25°C
416
W
T
J
T
JM
T
stg
-55 ... +150
°C
°C
°C
150
-55 ... +150
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
10
g
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
N-Channel Enhancement Mode
S
G
D
G = Gate
S = Source
D = Drain
TAB = Drain
TO-264 AA
95513C (4/97)
Features
Low R
HDMOS
TM
process
Rugged polysilicon gate cell
structure
International standard package
Fast switching times
Applications
Motor controls
DC choppers
Uninterruptable Power Supplies
(UPS)
Switch-mode and resonant-mode
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
Preliminary data
D (TAB)
IXTK 33N50
V
DSS
I
D (cont)
= 33 A
R
DS(on)
= 0.17
= 500 V
High Current
MegaMOS
TM
FET
IXYS reserves the right to change limits, test conditions, and dimensions.
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