參數(shù)資料
型號： IXTH28N50Q
廠商： International Rectifier
英文描述： Power MOSFETs Q-Class
中文描述： 功率MOSFET調(diào)Q級
文件頁數(shù)： 2/4頁
文件大小： 181K
代理商： IXTH28N50Q
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 28N50Q
IXTT 28N50Q
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
16
28
S
C
iss
C
oss
C
rss
3300
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
480
pF
125
pF
t
d(on)
t
r
t
d(off)
t
f
17
ns
V
GS
R
G
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
= 2.0
(External),
20
ns
51
ns
12
ns
Q
g(on)
Q
gs
Q
gd
94
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
20
nC
42
nC
R
thJC
R
thCK
0.31
K/W
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
28
A
I
SM
Repetitive; pulse width limited by T
JM
112
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
Q
RM
500
8.0
ns
μ
C
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
TO-268 Outline
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b
1
b
2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
.8
.016
.819
.610
.031
.845
.640
20.80
15.75
21.46
16.26
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
.170
242
.216
BSC
BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
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