參數(shù)資料
型號(hào)： IXTH20N60
廠商： IXYS CORP
元件分類： JFETs
英文描述： MegaMOS FET
中文描述： 20 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 105K
代理商： IXTH20N60
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C
15N60
20N60
15N60
20N60
15
20
60
80
A
A
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
P
D
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
TO-247 AD (IXTH)
MegaMOS
TM
FET
N-Channel Enhancement Mode
TO-204 AE (IXTM)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
600
V
V
2
4.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
0.35
Features
l
International standard packages
l
Low R
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
- easy to drive and to protect
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor control
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
Space savings
l
High power density
91537E(5/96)
D (TAB)
IXTH 20N60
IXTM 20N60
V
DSS
I
D25
R
DS(on)
= 0.35
= 600 V
= 20 A
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXTM20N60 MegaMOS FET
IXTH21N50 MegaMOSFET
IXTM21N50 MegaMOSFET
IXTM24N50 MegaMOSFET
IXTH24P20 Standard Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTH20N60 制造商:IXYS Corporation 功能描述:MOSFET N TO-247
IXTH20N60MA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247(5)
IXTH20N60MB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247(5)
IXTH20P25 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-218VAR
IXTH20P50P 功能描述:MOSFET -20.0 Amps -500V 0.450 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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