參數(shù)資料
型號： IXTH10P50
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： P-Channel Enhancement Mode Standard Power MOSFET(最大漏源擊穿電壓-500V,導通電阻0.90Ω的P溝道增強型標準功率MOSFET)
中文描述： 10 A, 500 V, 0.9 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 41K
代理商： IXTH10P50
1 - 2
2000 IXYS All rights reserved
TO-247 AD
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D (TAB)
Preliminary data
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
-500
-500
V
V
±
20
±
30
V
V
T
C
= 25
°
C
10P50
11P50
10P50
11P50
10P50
11P50
-10
-11
-40
-44
-10
-11
A
A
A
A
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
J
I
AR
T
C
= 25
°
C
E
AR
P
D
T
J
T
JM
T
stg
T
L
T
C
= 25
°
C
T
C
= 25
°
C
30
mJ
300
W
-55 ... +150
°
C
°
C
°
C
°
C
150
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
M
d
Weight
Mounting torque
1.13/10
Nm/lb.in.
6
g
V
DSS
-500 V
-500 V
R
DS(on)
0.90
-10 A
0.75
-11 A
I
D25
IXTH 10P50
IXTH 11P50
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
= -250
μ
A
BV
DSS
Temperature Coefficient
-500
V
0.054
%/K
V
GS(th)
V
DS
= V
, I
= -250
μ
A
V
GS(th)
Temperature Coefficient
-2.0
-4.5
V
-0.122
%/K
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
=
T
J
= 125
°
C
25
°
C
-200
μ
A
mA
-1
R
DS(on)
V
GS
= -10 V, I
D
= 0.5 I
D25
10P50
11P50
0.90
0.75
0.6
R
DS(on)
Temperature Coefficient
%/K
Features
International standard package
JEDEC TO-247 AD
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
Applications
High side switching
Push-pull amplifiers
DC choppers
Automatic test equipment
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
94535D (2/97)
P-Channel Enhancement Mode
Avalanche Rated
Standard Power MOSFET
IXYS reserves the right to change limits, test conditions, and dimensions.
相關PDF資料
PDF描述
IXTH10P60 Standard Power MOSFET
IXTH11N80 MegaMOSFET
IXTH13N80 MegaMOSFET
IXTM11N80 MegaMOSFET
IXTM13N80 MegaMOSFET
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