參數(shù)資料
型號: IXTH10N100D
廠商: IXYS CORP
元件分類: JFETs
英文描述: 10 A, 1000 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 5/5頁
文件大小: 127K
代理商: IXTH10N100D
2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_10N100D(7N)3-31-09-B
IXTH10N100D
IXTT10N100D
Fig. 15. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
Z
(
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25oC
0.1
1.0
10.0
100.0
10
100
1,000
10,000
V
DS
- Volts
I
D
T
J
= 150oC
T
C
= 25oC
Single Pulse
25μs
1ms
100μs
R
DS(on)
Limit
10ms
100ms
DC
Fig. 14. Forward-Bias Safe Operating Area
@ T
C
= 75oC
0.1
1.0
10.0
100.0
10
100
1,000
10,000
V
DS
- Volts
I
D
T
J
= 150oC
T
C
= 75oC
Single Pulse
25μs
1ms
100μs
R
DS(on)
Limit
10ms
100ms
DC
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