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參數(shù)資料
| 型號： | IXTH10N100D |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 1000 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 127K |
| 代理商： | IXTH10N100D |
IXTH10N100D
IXTT10N100D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol
(T
J
= 25
°
C, Unless Otherwise Specified)
Min. Typ. Max.
Test Conditions Characteristic Values
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 30V, I
D
= 0.5 I
D25
, Note 1 3.0 5.4
S
2500
pF
V
GS
= -10V, V
DS
= 25V, f = 1MHz
300
pF
100
pF
35
ns
85
110
ns
ns
75
ns
Q
g(on)
Q
gs
Q
gd
130
nC
V
GS
= 10V, V
DS
= 0.5 V
DSX
, I
D
= 0.5 I
D25
27
nC
58
nC
R
thJC
R
thCS
0.31
°
C/W
(TO-247) 0.21
°
C/W
Source-Drain Diode
Symbol
(T
J
= 25
°
C, Unless Otherwise Specified)
Test Conditions Characteristic Values
Min. Typ. Max.
V
SD
I
F
= I
D25
, V
GS
= -10V, Note 1
I
F
= 10A, -di/dt = 100A/
μ
s
V
R
= 100V, V
GS
= -10V
1.1 1.5 V
t
rr
850
ns
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
4,835,592
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405 B2
6,710,463
6,727,585
6,759,692
6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
4,881,106
Note 1: Pulse Test, t
≤
300
μ
s; Duty Cycle, d
≤
2%.
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 V
DSX
, I
D
= 0.5 I
D25
R
G
= 4.7
Ω
(External)
TO-268 (IXTT) Outline
e
P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate
2 - Drain
Tab - Drain
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
3 - Source
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Dim.
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXTH10N60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-247 |
| IXTH10N60A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-247 |
| IXTH10N80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 10A I(D) | TO-218VAR |
| IXTH10N90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10A I(D) | TO-218VAR |
| IXTH10N95 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 10A I(D) | TO-218VAR |
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