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參數(shù)資料
| 型號： | IXSP16N60 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low V CE(sat) IGBT - Short Circuit SOA Capability |
| 中文描述： | 32 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 48K |
| 代理商： | IXSP16N60 |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXSA16N60
IXSP16N60
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
3.3
5.0
S
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
50
A
C
ies
C
oes
C
res
920
65
14
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Q
g
Q
ge
Q
gc
40
13
18
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
30
30
ns
ns
ns
ns
mJ
100
310
1.9
420
470
2.9
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
30
30
ns
ns
mJ
ns
ns
mJ
0.12
150
510
3.0
R
thJC
1.25 K/W
Note 1: Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 25
°
C
I
C
= 16A, V
GE
= 15 V, L = 300
μ
H
V
CE
= 0.8 V
CES
, R
G
= 22
Dim.
Millimeter
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
Inches
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector Bottom Side
(Dimensions in inches and (mm))
Min. Recommended Footprint
Inductive load, T
J
= 125
°
C
I
C
= 16A, V
GE
= 15 V, L = 300
μ
H
V
CE
= 0.8 V
CES
, R
G
= 22
Dim.
Millimeter
Min.
12.70
14.23
9.66
3.54
5.85
2.29
1.15
2.79
0.64
2.54
4.32
0.64
0.51
2.04
Inches
Min.
0.500
0.560
0.380
0.139
0.230
0.090
0.045
0.110
0.025
0.100
0.170
0.025
0.020
0.080
Max.
14.93
16.50
10.66
4.08
6.85
2.79
1.77
6.35
0.89
BSC
4.82
1.39
0.76
2.49
Max.
0.580
0.650
0.420
0.161
0.270
0.110
0.070
0.250
0.035
BSC
0.190
0.055
0.030
0.115
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
TO-220 AB Outline
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IXSP20N60B2D1 | 功能描述:IGBT 晶體管 20 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSP24N60B | 功能描述:IGBT 晶體管 48 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSP2N100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 3A I(C) | TO-220AB |
| IXSP2N100A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 3A I(C) | TO-220AB |
| IXSQ10N60B2D1 | 功能描述:IGBT 晶體管 10 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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