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參數(shù)資料
| 型號： | IXGT28N30 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 56 A, 300 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 52K |
| 代理商： | IXGT28N30 |
2 - 2
2000 IXYS All rights reserved
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
I
= I
; V
= 10 V,
Pulse test, t 300 s, duty cycle 2 %
12
18
S
C
ies
C
oes
C
res
1500
130
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
40
Q
g
Q
ge
Q
gc
90
15
35
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
15
30
ns
ns
ns
ns
mJ
130
180
0.8
t
d(on)
t
ri
E
on
t
d(off)
t
fi
15
30
0.3
250
250
ns
ns
mJ
ns
ns
500
600
E
off
1.5
3.0
mJ
R
thJC
R
thCK
0.83 K/W
0.25
K/W
Inductive load, T
J
= 125 C
I
C
= I
C90
, V
GE
= 15 V, L = 100 H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Inductive load, T
J
= 25 C
I
C
= I
, V
GE
= 15 V, L = 100 H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
IXGH 28N30
IXGT 28N30
TO-247 AD (IXGH) Outline
Dim. Millimeter
Min.
Inches
Min.
Max.
Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55
0.610 0.640
0.140 0.144
3.65
E
F
4.32
5.4
5.49
6.2
0.170 0.216
0.212 0.244
G
H
1.65
2.13
4.5
0.065 0.084
-
-
0.177
J
K
1.0
10.8
1.4
11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5
2.49
0.087 0.102
Dim.
Millimeter
Min.
4.9
2.7
.02
1.15
1.9
.4
13.80
15.85
13.3
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
L1
1.20
1.40
L2
1.00
1.15
L3 0.25 BSC .010 BSC
L4
3.80
4.10
Inches
Min.
.193
.106
.001
.045
.75
.016
.543
.624
.524
Max.
5.1
2.9
.25
1.45
2.1
.65
14.00
16.05
13.6
Max.
.201
.114
.010
.057
.83
.026
.551
.632
.535
A
A
1
A
2
b
b
2
C
D
E
E
1
.736
.094
.047
.039
.752
.106
.055
.045
.150
.161
TO-268AA (D
3
PAK)
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGT28N30A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGT28N30B | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGT28N60B | 功能描述:IGBT 晶體管 40 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT28N60BD1 | 功能描述:IGBT 晶體管 40 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT28N90B | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFAST IGBT |
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