- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383200 > IXGT28N30 (IXYS CORP) HiPerFAST IGBT PDF資料下載
參數(shù)資料
| 型號(hào)： | IXGT28N30 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 56 A, 300 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 52K |
| 代理商： | IXGT28N30 |
1 - 2
2000 IXYS All rights reserved
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD
Features
International standard packages
JEDEC TO-268 surface and
JEDEC TO-247 AD
High current handling capability
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density
Suitable for surface mounting
Switching speed for high frequency
applications
Easy to mount with 1 screw,
(isolated mounting screw hole)
97528A (9/98)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
300
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
1
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.6
1.8
V
HiPerFAST
TM
IGBT
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
300
300
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 10
Clamped inductive load, L = 100 H
56
28
A
A
A
112
I
= 56
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
T
C
= 25 C
150
W
-55 ... +150
C
C
C
150
-55 ... +150
300
C
260
C
M
d
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
V
CES
I
C25
V
CE(sat)typ
=
t
fi(typ)
= 300 V
=
56 A
1.6 V
= 180 ns
Preliminary data
IXGH 28N30
IXGT 28N30
TO-268
(IXGT)
(TAB)
G
E
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGX40N60BD1 | HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管(帶二極管）) |
| IXHQ100 | Negative Voltage Hot Swap Controller with Active Power Filter |
| IXHQ100PI | Negative Voltage Hot Swap Controller with Active Power Filter |
| IXHQ100SI | Negative Voltage Hot Swap Controller with Active Power Filter |
| IXKC20N60C | CoolMOS Power MOSFET in ISOPLUS220 Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGT28N30A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGT28N30B | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGT28N60B | 功能描述:IGBT 晶體管 40 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT28N60BD1 | 功能描述:IGBT 晶體管 40 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT28N90B | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFAST IGBT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。