- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383199 > IXGM30N60 (IXYS CORP) Low VCE(sat) IGBT, High speed IGBT PDF資料下載
參數(shù)資料
| 型號： | IXGM30N60 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Low VCE(sat) IGBT, High speed IGBT |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, TO-204AE |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 64K |
| 代理商： | IXGM30N60 |
1996 IXYS All rights reserved
TO-247 AD (IXGH)
V
CES
600 V
600 V
I
C25
50 A
50 A
V
CE(sat)
2.5 V
3.0 V
Low V
CE(sat)
IGBT
High speed IGBT
IXGH/IXGM
30
N60
IXGH/IXGM
30
N60A
G
CE
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 33
Clamped inductive load, L = 100
μ
H
50
30
100
A
A
A
I
= 60
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
200
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
600
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
30N60
30N60A
2.5
3.0
V
V
TO-204 AE (IXGM)
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l
International standard packages
l
2nd generation HDMOS
TM
process
l
Low V
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
l
Voltage rating guaranteed at high
temperature (125
°
C)
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
High power density
91512E (3/96)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGM30N60A | Low VCE(sat) IGBT, High speed IGBT |
| IXGN200N60B | HiPerFASTTM IGBT |
| IXGN50N60BD2 | HiPerFAST IGBT with HiPerFRED(VCES為600V，VCE(sat)為2.5V的HiPerFAST絕緣柵雙極晶體管(帶快速恢復(fù)外延型二極管)) |
| IXGN50N60B | HiPerFASTTM IGBT |
| IXGN60N60 | Ultra-Low VCE(sat) IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGM30N60A | 制造商: 功能描述: 制造商:undefined 功能描述: |
| IXGM40N50A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | TO-3 |
| IXGM40N60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High speed IGBT |
| IXGM40N60A | 功能描述:IGBT 晶體管 40 Amps 600V 3V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGN100N120 | 功能描述:IGBT 晶體管 G-series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。