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參數(shù)資料
| 型號： | IXGH45N120 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT |
| 中文描述： | 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 64K |
| 代理商： | IXGH45N120 |
2001 IXYS All rights reserved
IGBT
High Voltage, Low V
CE(sat)
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1200
= 75
= 2.5
= 390 ns
V
A
V
IXGH 45N120
IXGT 45N120
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD (IXGH)
Features
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
High current handling capability
MOS Gate turn-on
- drive simplicity
Molding epoxies meet UL
94
V-0
flammability classification
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Capacitor discharge
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
98666A (11/01)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1 mA, V
= 0 V
= 750
μ
A, V
CE
= V
GE
1200
2.5
V
V
5
I
CES
V
CE
= V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
250
μ
A
mA
2
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.5
V
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
1200
1200
V
V
±
20
±
30
V
V
T
C
= 25
°
C, limited by leads
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
G
= 5
Clamped inductive load
75
45
A
A
A
180
I
= 90
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
T
C
= 25
°
C
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
300
°
C
260
°
C
M
d
Weight
Mounting torque (M3)
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
TO-268 (IXGT)
G
E
C (TAB)
Preliminary data sheet
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGT45N120 | IGBT |
| IXGH50N60B2 | HiPerFASTTM IGBT B2-Class High Speed IGBTs |
| IXGT50N60B2 | HiPerFASTTM IGBT B2-Class High Speed IGBTs |
| IXGH60N60B2 | Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching |
| IXGT60N60B2 | Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching |
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參數(shù)描述 |
|---|---|
| IXGH48N60A3 | 功能描述:IGBT 晶體管 75 Amps 600V 1.05 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH48N60A3D1 | 功能描述:IGBT 晶體管 G-SERIES A3/B3/C3 GENX3 IGBT 600V 48A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH48N60B3 | 功能描述:MOSFET 48 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXGH48N60B3C1 | 功能描述:IGBT 晶體管 G-SERIES GENX3SIC IGBT 600V 48A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH48N60B3D1 | 功能描述:IGBT 晶體管 75 Amps 600V 1.05 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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