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參數(shù)資料
| 型號： | IXGH50N60B2 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFASTTM IGBT B2-Class High Speed IGBTs |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 585K |
| 代理商： | IXGH50N60B2 |
2004 IXYS All rights reserved
V
CES
I
C25
V
CE(sat)
t
fi
typ
= 600 V
= 75 A
= 2.0 V
= 65 ns
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
GE(th)
I
C
= 250
μ
A, V
CE
= V
GE
3.0
5.0
V
I
CES
V
CE
= V
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 150
°
C
50
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= 40 A, V
GE
= 15 V
1.6
1.5
2.0
V
V
T
J
= 125
°
C
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
600
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C110
I
CM
T
C
= 25
°
C (limited by leads)
T
C
= 110
°
C
T
C
= 25
°
C, 1 ms
V
GE
= 15 V, T
VJ
= 125
°
C, R
G
= 10
Clamped inductive load @
≤
600V
75
A
50
A
200
A
SSOA
(RBSOA)
I
CM
= 80
A
P
C
T
C
= 25
°
C
400
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Mounting torque (TO-247)
1.13/10Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
DS99145A(03/04)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z
High frequency IGBT
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
Applications
z
PFC circuits
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
Advantages
z
High power density
z
Very fast switching speeds for high
frequency applications
HiPerFAST
TM
IGBT
B2-Class High Speed IGBTs
IXGH 50N60B2
IXGT 50N60B2
TO-268
(IXGT)
C (TAB)
C (TAB)
GCE
TO-247
(IXGH)
E
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGT50N60B2 | HiPerFASTTM IGBT B2-Class High Speed IGBTs |
| IXGH60N60B2 | Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching |
| IXGT60N60B2 | Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching |
| IXGH60N60C2 | HiPerFASTTM IGBT C2-Class High Speed IGBTs |
| IXGT60N60C2 | HiPerFASTTM IGBT C2-Class High Speed IGBTs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH50N60B4 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High-Gain IGBTs |
| IXGH50N60BS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247SMD |
| IXGH50N60C2 | 功能描述:IGBT 晶體管 50 Amps 600V 2.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH50N60C4 | 功能描述:IGBT 模塊 High-Gain IGBTs RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGH50N90B2 | 功能描述:IGBT 晶體管 50 Amps 900V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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