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參數(shù)資料
| 型號(hào)： | IXGH20N100 |
| 廠(chǎng)商： | IXYS CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | IGBT for AC Motor Speed Control(VCES為1000V，VCE(sat)為3.0V的絕緣柵雙極晶體管) |
| 中文描述： | 40 A, 1000 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 53K |
| 代理商： | IXGH20N100 |
1 - 2
2000 IXYS All rights reserved
IGBT
V
CES
= 1000 V
I
C25
= 40 A
V
CE(sat)
= 3.0 V
t
fi(typ)
= 280 ns
IXGH 20N100
IXGT 20N100
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD (IXGH)
Features
International standard packages
JEDEC TO-268 surface and
JEDEC TO-247 AD
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Capacitor discharge
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
98620B (7/00)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1 mA, V
= 0 V
= 250 A, V
CE
= V
GE
1000
2.5
V
V
5
I
CES
V
CE
= V
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
250
A
1
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.2
3.0
V
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
1000
1000
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 47
Clamped inductive load, L = 100 H
40
20
80
A
A
A
I
= 40
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
T
C
= 25 C
150
W
-55 ... +150
C
C
C
150
-55 ... +150
300
C
260
C
M
d
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
TO-268
(IXGT)
G
E
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
C (TAB)
Preliminary data
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH20N100A | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 40A I(C) | TO-247 |
| IXGH20N100U1 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 36A I(C) | TO-247 |
| IXGH20N120 | 功能描述:IGBT 晶體管 40 Amps 1200V 3 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH20N120A3 | 功能描述:IGBT 晶體管 G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH20N120B | 功能描述:IGBT 晶體管 20 Amps 1200V 3.40 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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