參數(shù)資料
型號(hào): IXGH12N100
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
中文描述: 20 A, 1000 V, N-CHANNEL IGBT, TO-247AD
封裝: TO-247AD, 3 PIN
文件頁(yè)數(shù): 3/5頁(yè)
文件大小: 151K
代理商: IXGH12N100
3 - 5
2000 IXYS All rights reserved
V
GE
- Volts
2
4
6
8
10
12
I
C
0
10
20
30
40
50
V
CE
- Volts
0
2
4
6
8
10
I
C
0
10
20
30
40
50
V
CE
-Volts
0
5
10
15
20
25
30
35
40
C
10
100
1000
T
J
- Degrees C
25
50
75
100
125
150
V
C
0.6
0.8
1.0
1.2
1.4
1.6
V
CE
- Volts
0
4
8
12
16
20
I
C
0
20
40
60
80
100
13V
11V
9V
7V
V
CE
= 10V
T
J
= 25
°
C
V
GE
= 15V
T
J
= 25
°
C
I
C
= 6A
I
C
= 12A
I
C
= 24A
f = 1Mhz
7V
V
GE
= 15V
T
J
= 25
°
C
V
CE
- Volts
0
2
4
6
8
10
I
C
0
10
20
30
40
50
T
J
= 125
°
C
C
iss
C
oss
V
GE
= 15V
13V
11V
V
GE
= 15V
13V
11V
9V
7V
9V
C
rss
T
J
=
125
°
C
IXGH12N100U1
IXGH12N100AU1
Figure 4. Temperature Dependence of V
CE(sat)
Figure 2. Extended Output Characteristics
Figure 1. Saturation Voltage Characteristics
Figure 3. Saturation Voltage Characteristics
Figure 6. Capacitance Curves
Figure 5. Admittance Curves
相關(guān)PDF資料
PDF描述
IXGH12N100U1 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGH12N100AU1 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGH12N60BD1 HiPerFAST IGBT(VDSS為600V,VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管)
IXGH12N60B HiPerFAST IGBT(VDSS為600V,VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管)
IXGH12N60CD1 HiPerFASTTM IGBT LightspeedTM Series
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