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參數(shù)資料
| 型號： | IXGH10N60AU1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 110K |
| 代理商： | IXGH10N60AU1 |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH10N60U1
IXGH10N60AU1
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
4
8
S
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
750
125
30
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
50
15
25
70
25
45
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
100
200
0.4
600
300
0.6
ns
ns
mJ
ns
ns
mJ
10N60AU1
10N60AU1
100
200
ns
ns
mJ
ns
ns
ns
mJ
mJ
1
900
570
360
2.0
1.2
1500
2000
600
10N60U1
10N60AU1
10N60U1
10N60AU1
E
off
R
thJC
R
thCK
1.25 K/W
0.25
K/W
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 100
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 150
Switching times may increase
for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
°
C
I
C
= I
, V
GE
= 15 V, L = 100
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 150
Switching times may increase
for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
TO-247 AD Outline
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.75
V
I
RM
t
rr
I
F
= I
, V
GE
= 0 V, -di
F
/dt = 64 A/
μ
s
V
= 360 V
I
F
= 1 A; -di/dt = 50 A/
μ
s; V
R
= 30 V T
J
= 25
°
C
2.5
165
35
A
T
J
=100
°
C
ns
ns
50
R
thJC
2.5 K/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH10N60U1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs |
| IXGH120N30B3 | 功能描述:IGBT 晶體管 120 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH120N30C3 | 功能描述:IGBT 晶體管 120 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH12N100 | 功能描述:IGBT 晶體管 24Amps 1000V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH12N100A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 24A I(C) | TO-247AD |
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