參數(shù)資料
型號： IXFX44N55Q
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFETs Q-CLASS
中文描述： 44 A, 550 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, PLUS247, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 111K
代理商： IXFX44N55Q
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
550
550
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
T
C
= 25
°
C
44
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
176
A
I
AR
T
C
= 25
°
C
44
A
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
60
2.5
mJ
J
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
10
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25
°
C
500
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Mounting torque
TO-264
0.4/6
Nm/lb.in.
PLUS 247
TO-264
6
g
g
10
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
550
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250uA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20 V, V
DS
= 0
2.5
4.5 V
±
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
100
μ
A
2 mA
120 m
T
J
= 125
°
C
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
98918 (04/02)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
S
G
D
(TAB)
TO-264 AA (IXFK)
Advance Technical Information
HiPerFET
TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated,
Low Qg
High dV/dt,
Low t
rr
Features
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL
94
V-0
flammability classification
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
V
DSS
I
R
DS(on)
t
rr
≤
250 ns
= 550 V
= 44 A
= 120 m
IXFK 44N55Q
IXFX 44N55Q
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參數(shù)描述
IXFX44N60 功能描述:MOSFET 600V 44A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFX44N80P 功能描述:MOSFET 44 Amps 800V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFX44N80Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 800V/44A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFX48N50Q 功能描述:MOSFET 48 Amps 500V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFX48N55 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs
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