參數(shù)資料
型號： IXFV18N60PS
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarHV HiPerFET Power MOSFET
中文描述： 18 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLUS220SMD, 3 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 179K
代理商： IXFV18N60PS
2006 IXYS All rights reserved
G = Gate
S = Source
D = Drain
TAB = Drain
DS99390E(03/06)
PolarHV
TM
HiPerFET
Power MOSFET
IXFH 18N60P
IXFV 18N60P
IXFV 18N60PS
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
BV
DSS
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5 mA
3.0
5.5
V
I
GSS
V
GS
=
±
30 V, V
DS
= 0 V
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 125
°
C
250
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
400
m
Ω
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Ω
600
600
V
V
V
GS
V
GSM
Continuous
Tranisent
±
30
±
40
V
V
I
D25
I
DM
I
AR
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
18
45
A
A
18
A
30
1.0
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 5
Ω
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
T
J
T
JM
T
stg
360
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
T
SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°
C
°
C
M
d
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
Weight
TO-247
PLUS220 & PLUS220SMD
6
4
g
g
G
S
D
PLUS220 (IXFV)
G
S
PLUS220SMD (IXFV...S)
D (TAB)
D (TAB)
TO-247 AD (IXFH)
V
DSS
I
D25
R
DS(on)
≤
t
rr
=
=
600
18
400 m
Ω
200 ns
V
A
≤
D (TAB)
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參數(shù)描述
IXFV18N90P 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFV18N90PS 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFV20N80P 功能描述:MOSFET 20 Amps 800V 0.52 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFV20N80PS 功能描述:MOSFET 20 Amps 800V 0.52 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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