參數(shù)資料
型號(hào): IXFT80N20Q
廠商: IXYS CORP
元件分類: JFETs
英文描述: HiPerFET Power MOSFETs Q-Class
中文描述: 80 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
封裝: TO-268, 3 PIN
文件頁數(shù): 1/2頁
文件大小: 70K
代理商: IXFT80N20Q
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
200
200
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
80
320
80
A
A
A
45
1.5
mJ
J
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
360
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
C
Mounting torque
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
Weight
TO-247
TO-264
TO-268
6
g
g
g
10
4
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250 uA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
200
2.0
V
V
4.0
100
nA
T
J
= 25 C
T
J
= 125 C
25
1
A
mA
R
DS(on)
28
m
G = Gate
S = Source
TAB = Drain
98605A (6/99)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
I
D25
R
DS(on)
= 28 m
t
rr
= 200 V
= 80 A
200 ns
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
Features
Low gate charge
International standard packages
Epoxy
meet
UL
94
V-0, flammability
classification
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
IXFH 80N20Q
IXFK 80N20Q
IXFT 80N20Q
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