參數(shù)資料
型號(hào)： IXFT32N50
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs
中文描述： 32 A, 500 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
封裝： TO-268, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 110K
代理商： IXFT32N50
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
500
500
V
V
20
V
V
30
T
C
= 25 C
30N50
32N50
30N50
32N50
30N50
32N50
30
32
120
128
30
32
1.5
45
5
A
A
A
A
A
A
J
I
DM
T
= 25 C
pulse width limited by T
JM
T
C
= 25 C
I
AR
E
AS
E
AR
dv/dt
T
C
= 25 C
I
D
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
mJ
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
360
W
-55 ... +150
150
-55 ... +150
C
C
C
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10
Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
V
DSS
temperature coefficient
500
V
0.102
%/K
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
V
GS(th)
temperature coefficient
2
4
V
-0.206
%/K
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 15A
32N50
30N50
0.15
0.16
Pulse test, t 300 s, duty cycle d 2 %
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Diode
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
G = Gate,
S = Source,
D = Drain,
TAB = Drain
97518H (6/99)
V
DSS
500 V
500 V
I
D25
30 A
32 A
R
DS(on)
0.16
0.15
rr
250 ns
IXFH/IXFT 30N50
IXFH/IXFT 32N50
D (TAB)
TO-268 (D3) Case Style
(TAB)
G
S
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXFH30N50 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.16Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFH32N50 HiPerFET Power MOSFETs
IXFT40N30Q HiPerFET Power MOSFETs Q-Class
IXFH40N30Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻80mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFT4N100 HiPerFET Power MOSFETs Q-Class
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFT32N50Q 功能描述:MOSFET 500V 32A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT340N075T2 功能描述:MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 340A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT36N50P 功能描述:MOSFET 500V 36A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT36N60P 功能描述:MOSFET 600V 36A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT400N075T2 功能描述:MOSFET TrenchT2 HiperFETs Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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