參數(shù)資料
型號(hào)： IXFN43N60
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFET
中文描述： 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, MINIBLOC-4
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 82K
代理商： IXFN43N60
1 - 2
2000 IXYS All rights reserved
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
TO-264 AA (IXFK)
Features
International standard packages
Encapsulating
epoxy
meets
UL
94
V-0, flammability classification
miniBLOC
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D = Drain
TAB = Drain
S
G
D
D (TAB)
Symbol
(T
J
= 25 C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
GH(th)
V
DS
= V
GS
, I
D
= 8mA
Test Conditions
Characteristic Values
Min.
Max.
600
V
V
2
4
I
GSS
I
DSS
V
GS
= 20 V
GE
= 0
V
DS
= 0.8 V
DSS
V
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
D25
Pulse test, t 300 ms,
duty cycle d 2 %
200
nA
T
J
= 25 C
T
J
= 125 C
43N60
40N60
400
A
2
mA
R
DS(on)
0.13
0.15
97503 A(7/97)
HiPerFET
TM
Power MOSFET
Single MOSFET Die
ADVANCE INFORMATION
Symbol
Test Conditions
Maximum Ratings
IXFK
43N60 40N60
IXFK
IXFN
43N60
IXFN
40N60
V
DSS
V
DGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C
600
600
600
600
V
V
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
Continuous
Transient
20
30
20
30
V
V
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
T
J
150 C, R
G
= 2
T
C
= 25 C
43
172
43
40
160
40
43
172
43
40
160
40
A
A
A
60
60
mJ
5
5
V/ns
P
D
560
600
W
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
T
L
V
ISOL
1.6 mm (0.063 in) from case for 10 s
300
N/A
C
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
N/A
N/A
2500
3000
V~
V~
M
d
0.9/6
N/A
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10
30
g
V
DSS
I
D25
R
DS(on)
t
rr
IXFN 43N60
IXFN 40N60
IXFK 43N60
IXFK 40N60
600V
600V
600V
600V
43A
40A
43A
40A
0.13
0.15
0.13
0.15
200ns
200ns
200ns
200ns
IXYS reserves the right to change limits, test conditions, and dimensions.
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFN44N100P 功能描述:MOSFET 44 Amps 1000V 0.22 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN44N100Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/38A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN44N50 功能描述:MOSFET 500V 44A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN44N50Q 功能描述:MOSFET 44 Amps 500V 0.12 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN44N50Q_03 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q-Class
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