參數(shù)資料
型號(hào)： IXFN25N90
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs Single Die MOSFET
中文描述： 25 A, 900 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： MINIBLOC-4
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 162K
代理商： IXFN25N90
2002 IXYS All rights reserved
TO-264 AA (IXFK)
S
G
D
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
(TAB)
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D = Drain
TAB = Drain
Features
International standard packages
JEDEC
TO-264 AA,
epoxy
meet
UL
94
V-0, flammability classification
miniBLOC,
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
V
DSS
temperature coefficient
V
DS
= V
GS
, I
D
= 8 mA
V
GS(th)
temperature coefficient
800
V
0.096
%/K
V
%/K
V
GH(th)
2
4.5
-0.214
I
GSS
I
DSS
V
GS
=
±
20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μ
s,
duty cycle d
≤
2 %
±
200
nA
T
J
= 25
°
C
T
J
= 125
°
C
500
2
μ
A
mA
R
DS(on)
25N80
27N80
0.35
0.30
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
800
800
800
800
V
V
±
20
±
30
±
20
±
30
V
V
T
C
= 25
°
C, Chip capability
27N80
25N80
27
25
27
25
A
A
A
A
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
27N80 108
T
C
= 25
°
C
108
100
14
13
25N80 100
27N80
25N80
I
AR
14
13
E
AR
dv/dt
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
30
30
mJ
5
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
500
520
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
-
°
C
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
-
-
2500
3000
V~
V~
M
d
0.9/6
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
-
Weight
10
30
g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
95561D(6/02)
V
DSS
800 V
800 V
800 V
800 V
I
D25
27 A
25 A
27 A
25 A
R
DS(on)
0.30
0.35
0.30
0.35
IXFK 27N80
IXFK 25N80
IXFN 27N80
IXFN 25N80
Not for New Designs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFN-25N90 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFETTM Power MOSFETs Single Die MOSFET
IXFN260N17T 功能描述:MOSFET 245A 170A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN26N100P 功能描述:MOSFET 26 Amps 1000V 0.39 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN26N120P 功能描述:MOSFET 26 Amps 1200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN26N90 功能描述:MOSFET 900V 26A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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