參數(shù)資料
型號(hào)： IXFK44N50F
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： FILM/M CAPACITANCE=4.7 VOLT=100
中文描述： 44 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 99K
代理商： IXFK44N50F
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
Note 1
22
32
S
C
iss
C
oss
C
rss
5500
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
990
pF
330
pF
t
d(on)
t
r
t
d(off)
t
f
23
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1
(External)
18
ns
53
ns
8
ns
Q
g(on)
Q
gs
Q
gd
162
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
56
nC
70
nC
R
thJC
R
thCK
0.26
K/W
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
44
A
I
SM
Repetitive;
pulse width limited by T
JM
164
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
1.0
μ
C
I
RM
8
A
I
F
= 25 A,-di/dt = 100 A/
μ
s, V
R
= 100 V
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
b
b
1
b
2
C
D
E
4.83
2.29
1.91
5.21
2.54
2.16
.190
.090
.075
.205
.100
.085
1.14
1.91
2.92
1.40
2.13
3.12
.045
.075
.115
.055
.084
.123
0.61
20.80
15.75
0.80
21.34
16.13
.024
.819
.620
.031
.840
.635
e
L
L1
5.45 BSC
19.81
3.81
.215 BSC
.780
.150
20.32
4.32
.800
.170
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170
.190
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline
Note: 1. Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
IXFK 44N50F
IXFX 44N50F
TO-264 AA Outline
Millimeter
Min.
Inches
Max.
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
.190
.100
.079
.044
.094
.114
.021
1.020
.780
.202
.114
.083
.056
.106
.122
.033
1.030
.786
5.46 BSC
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
.215 BSC
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Dim.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFK44N50F_09 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFK44N50P 功能描述:MOSFET 500V 44A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK44N50Q 功能描述:MOSFET 44 Amps 500V 0.12 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK44N50S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 44A I(D) | TO-264VAR
IXFK44N55Q 功能描述:MOSFET 44 Amps 550V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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