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參數(shù)資料
| 型號： | IXFK38N80Q2 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R |
| 中文描述： | 38 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | PLASTIC, TO-264, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 605K |
| 代理商： | IXFK38N80Q2 |
2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
800
800
V
V
±
30
±
40
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
38
A
A
A
150
38
75
4.0
mJ
J
20
V/ns
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
735
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6mm (0.063in) from case for 10s (Plus247, TO-264) 300
°
C
50/60Hz, RMS t =1 min SOT-227B
I
ISOL
< 1mA t = 1s
Mounting torque
Terminal torque
2500
3000
V~
V~
M
d
TO-264
SOT-227B
0.9/8 Nm/lb.in.
1.5/13 Nm/ib.in.
F
C
Weight
Mounting force
PLUS-247 22...130/5...30
N/lb
PLUS247
TO-264
SOT-227B
g
10
30
g
g
HiPerFET
TM
Power MOSFETs
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Low intrinsic R
g
Features
z
Double metal process for low gate
resistance
z
International standard packages
z
Epoxy
meet
UL
94
V-0, flammability
classification
z
Avalanche energy and current rated
z
Fast intrinsic Rectifier
z
miniBLOC package version with
Aluminum Nitrate isolation
Advantages
z
Easy to mount
z
Space savings
z
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±
30 V
DC
, V
DS
= 0
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
800
2.0
V
V
4.5
±
200
nA
T
J
= 25
°
C
T
J
= 125
°
C
50
μ
A
mA
2
R
DS(on)
220 m
G = Gate
S = Source
D = Drain
TAB = Drain
DS99150A(09/04)
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
I
D25
R
DS(on)
t
rr
≤
250 ns
= 800 V
= 38 A
= 220 m
IXFK 38N80Q2
IXFN 38N80Q2
IXFX 38N80Q2
PLUS 247
TM
(IXFX)
G
D
Preliminary Data Sheet
miniBLOC, SOT-227 B (IXFN)
E153432
G
S*
S*
D
* Either Source terminal can be used as
main or Kelvin source terminal
D (TAB)
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| IXFK38N80Q2_08 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q2-Class |
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| IXFK40N90P | 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK420N10T | 功能描述:MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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