參數(shù)資料
型號: IXFH76N06-11
廠商: IXYS CORP
元件分類: JFETs
英文描述: HiPerFET Power MOSFETs
中文描述: 76 A, 60 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝: TO-247AD, 3 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 80K
代理商: IXFH76N06-11
4 - 4
2000 IXYS All rights reserved
IXFH
76
N06-11
IXFH
76
N06-12
IXFH
76
N07-11
IXFH
76
N07-12
V
SD
- Volts
0.0
0.5
1.0
1.5
2.0
I
D
0
50
100
150
200
Fig. 11 Transient Thermal Impedance
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
T
0.001
0.010
0.100
Single Pulse
D=0.01
D=0.05
D=0.02
D=0.1
D=0.2
D=0.5
Fig. 10 Source Current vs.
Source to Drain Voltage
V
DS
- Volts
0
10
20
30
40
C
0
1000
2000
3000
4000
5000
6000
C
rss
C
oss
C
iss
Fig. 9 Capacitance Curves
T
J
=25
°
C
T
J
=150
°
C
Gate Charge - nCoulombs
0
50
100
150
200
250
300
350
V
G
0
2
4
6
8
10
12
14
16
Fig. 7 Gate Charge
V
DS
- Volts
1
10
100
I
D
1
10
100
1000
Limited by R
ds(on)
10
m
s
100
m
s
100ms
DC
10ms
1ms
Fig. 8 Forward Bias Safe Operating Area
VDS = 40V
ID = 38A
IG = 1mA
T
J
=100
°
C
f = 1MHz
T
J
=150
°
C
T
C
= 25
°
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFH76N06-12 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs
IXFH76N07-11 功能描述:MOSFET 70V 76A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH76N07-11 制造商:IXYS Corporation 功能描述:MOSFET N TO-247
IXFH76N07-12 功能描述:MOSFET 70V 76A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH7N80 功能描述:MOSFET 7 Amps 800V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube