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參數(shù)資料
| 型號： | IXFH52N30Q |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導通電阻60mΩ的N溝道增強型HiPerFET功率MOSFET) |
| 中文描述： | 52 A, 300 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 70K |
| 代理商： | IXFH52N30Q |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
300
300
V
V
20
30
V
V
T
C
= 25 C, Chip capability
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
52
A
A
A
208
52
30
1.5
mJ
J
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
360
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
C
Mounting torque
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
Weight
TO-247
TO-264
TO-268
6
g
g
g
10
4
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Low Gate Charge and Capacitances
Features
Low gate charge
International standard packages
Epoxy
meet
UL
94
V-0, flammability
classification
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
300
V
V
2
4
200
nA
T
J
= 25 C
T
J
= 125 C
50
1
A
mA
R
DS(on)
60
m
G = Gate
S = Source
TAB = Drain
98522B (7/00)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
I
D25
R
DS(on)
= 60 m
t
rr
= 300 V
= 52 A
250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 52N30Q
IXFK 52N30Q
IXFT 52N30Q
Preliminary data
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFH52N50P2 | 功能描述:MOSFET PolarP2 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH58N20 | 功能描述:MOSFET 200V 58A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH58N20 | 制造商:IXYS Corporation 功能描述:MOSFET N TO-247 |
| IXFH58N20Q | 功能描述:MOSFET 200V 58A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH58N20S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 58A I(D) | TO-247VAR |
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