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參數(shù)資料
| 型號(hào)： | IXFA4N100Q |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻3.0Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | PLASTIC, TO-263, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | IXFA4N100Q |
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
DM
I
AR
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
4
A
A
A
16
4
E
AR
E
AS
T
C
= 25 C
20
mJ
700
mJ
dv/dt
I
S
T
J
150 C, R
G
= 2
I
, di/dt 100 A/ s, V
DD
V
DSS
,
5
V/ns
P
D
T
C
= 25 C
150
W
T
J
T
JM
T
stg
-55 to +150
150
-55 to +150
C
C
C
T
L
1.6 mm (0.063 in) from case for 10 s 300
C
M
d
Mounting torque (TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220 4
TO-263 2
g
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
Switching (UIS)
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1.5 mA
1000
3.0
V
V
5.0
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
50
1
A
mA
R
DS(on)
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
3.0
HiPerFET
TM
Power MOSFETs
Q-Class
V
DSS
I
D25
R
DS(on)
=1000 V
=
= 3.0
4 A
t
rr
250 ns
Preliminary Data Sheet
G
S
TO-263 (IXFA)
GDS
TO-220 (IXFP)
G = Gate
S = Source
D = Drain
TAB = Drain
IXFA 4N100Q
IXFP 4N100Q
D (TAB)
D (TAB)
98705 (02/04/00)
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFA4N100Q_11 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiperFET Power MOSFETs Q-Class |
| IXFA4N100Q-TRL | 功能描述:MOSFET N-CH 1000V 4A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HiPerFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IXFA4N60P3 | 功能描述:MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFA5N100P | 功能描述:MOSFET Polar Power MOSFET HiPerFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFA5N50P3 | 功能描述:MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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