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參數(shù)資料
| 型號(hào)： | IXFC15N80Q |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET ISOPLUS 220 MOSFET Q-Class Electrically Isolated Back Surface |
| 中文描述： | 13 A, 800 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS220, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 517K |
| 代理商： | IXFC15N80Q |
2003 IXYS All rights reserved
Symbol
Test Conditions
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Maximum Ratings
V
DSS
V
DGR
800
800
V
V
V
GS
V
GSM
I
D25
I
DM
I
AR
Continuous
Transient
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
13
A
60
A
15
A
E
AR
E
AS
30
mJ
1.0
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
T
J
T
JM
T
stg
230
W
°
C
°
C
°
C
-40 ... +150
150
-40 ... +150
T
L
V
ISOL
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Weight
2
g
DS98946B(07/03)
IXFC 15N80Q
V
DSS
I
D25
R
DS(on)
t
rr
≤
250 ns
= 800 V
= 13 A
= 0.65
HiPerFET
TM
ISOPLUS 220
TM
MOSFET
Q-Class
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<35pF)
z
Low R
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Fast intrinsic Rectifier
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
Advantages
z
Easy assembly: no screws or isolation
foils required
z
Space savings
z
High power density
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
= 3 mA
Test Conditions
Characteristic Values
Min. Typ.
Max.
800
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
mA
1
R
DS(on)
0.65
F
C
50/60 Hz, RMS t = 1 min leads to tab 2500 V
mounting force with clip 11...65 / 2.5...15
N
/lb
G = Gate
S = Source
D = Drain
G
DS
ISOPLUS220
TM
Isolated back surface*
See IXFH15N80Q data sheet for
characteristic curves
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